Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review

نویسندگان

چکیده

Gallium oxide (Ga2O3) is rapidly emerging as a material of choice for the development solar blind photodetectors and power electronic devices which are particularly suitable in harsh environment applications, owing to its wide bandgap extremely high Baliga figure merit (BFOM). The Ga2O3 based show robustness against chemical, thermal radiation environments. Unfortunately, current technology still not mature commercial usage., Thus, extensive research on growth various polymorph materials has been carried out. This article aims provide an overview understanding epitaxial different phases by techniques including pulsed laser deposition (PLD), molecular beam epitaxy (MBE), metal-organic chemical vapour (MOCVD), sputtering, mist (Mist CVD) atomic layer (ALD).The review also investigates factors such temperature, pressure, carrier gas, III/V ratio, substrate well doping would influence synthesis stability meta stable Ga2O3. In addition, through discussion window provided using phase diagrams aforementioned methods.

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ژورنال

عنوان ژورنال: Journal of Physics D

سال: 2021

ISSN: ['1361-6463', '0022-3727']

DOI: https://doi.org/10.1088/1361-6463/ac1af2